PART |
Description |
Maker |
NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ). InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ). InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ). InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ). InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
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NEC
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NDL7564P NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?碌F Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?掳C to 85?掳C InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应 InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
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NEC, Corp. NEC Corp. NEC[NEC]
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ML725C8F ML701B8R ML720J8S ML720K8S ML725B8F ML725 |
InGaAsP- MQW FP laser diode InGaAsP-MQW-FP LASER DIODES InGaAsP - MQW - FP LASER DIODES
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Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
|
NX5317 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE 1 310nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
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Renesas Electronics Corporation
|
ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE 1553 nm, LASER DIODE 1558 nm, LASER DIODE 1544 nm, LASER DIODE InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制 InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制 1549 nm, LASER DIODE
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Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
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NEC, Corp. NEC Corp. NEC[NEC]
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NX6504SH NX6504SJ NX6504GK NX6504SI NX6504SK NX650 |
1550 nm InGaAsP MQW DFB laser diode for fiber optic communications. 1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
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NEC CEL[California Eastern Labs]
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NX5312_06 NX5312 NX5312EH-AZ NX5312EK-AZ NX531206 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
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CEL[California Eastern Labs]
|
NX5315EH_06 NX5315EH NX5315EH-AZ NX5315EH06 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
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CEL[California Eastern Labs]
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